s852tf document number 85104 rev. 1.4, 05-sep-08 vishay semiconductors www.vishay.com 1 2 1 3 electrostatic sensitive device. observe precautions for handling. 16867 not for new design, this pr oduct will be obsoleted soon silicon npn planar rf transistor description the main purpose of this bipolar transistor is broad- band amplification up to 2 ghz. in the space-saving 3-pin surface-mount sot-490 package electrical per- formance and reliability are taken to a new level cov- ering a smaller footprint on pc boards than previous packages. in addition to space savings, the sot-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. due to the short length of its leads the sot-490 is also reducing package inductances resulting in some better electrical performance. all of these aspects make this device an ideal choice for demanding rf applications. features ? low supply voltage ? low current consumption ? low noise figure ?50 input impedance at 945 mhz ? high power gain ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications for low noise and high gain broadband amplifiers at collector currents from 0.2 ma to 5 ma. mechanical data typ: s852tf case: sot-490 plastic case weight: approx. 2.5 mg pinning: 1 = collector, 2 = base, 3 = emitter parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part marking package s852tf 52 sot-490 parameter test condition symbol value unit collector-base voltage v cbo 12 v collector-emitter voltage v ceo 6v emitter-base voltage v ebo 2v collector current i c 8ma total power dissipation t amb 125 c p tot 30 mw junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c e3
www.vishay.com 2 document number 85104 rev. 1.4, 05-sep-08 s852tf vishay semiconductors maximum thermal resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit junction ambient 1) r thja 450 k/w parameter test condition symbol min ty p. max unit collector-emitter cut-off current v ce = 12 v, v be = 0 i ces 100 a collector-base cut-off current v cb = 8 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 1 v, i c = 0 i ebo 1 a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 6v collector-emitter saturation voltage i c = 5 ma, i b = 0.5 ma v cesat 0.1 0.4 v dc forward current transfer ratio v ce = 5 v, i c = 30 ma h fe 40 90 150
s852tf document number 85104 rev. 1.4, 05-sep-08 vishay semiconductors www.vishay.com 3 electrical ac characteristics t amb = 25 c, unless otherwise specified package dimensions in mm parameter test condition symbol min ty p. max unit transition frequency v ce = 3 v, i c = 1 ma, f = 500 mhz f t 4.7 ghz v ce = 2 v, i c = 1.5 ma, f = 500 mhz f t 5.2 ghz collector-base capacitance v cb = 1 v, f = 1 mhz c cb 0.25 pf noise figure v ce = 2 v, i c = 0.5 ma, z s = z sopt , f = 450 mhz f opt 1.1 db v ce = 3 v, i c = 1 ma, z s = z sopt , f = 945 mhz f opt 1.7 db v ce = 2 v, i c = 1.5 ma, z s = z sopt , f = 945 mhz f opt 1.9 db power gain v ce = 2 v, i c = 0.5 ma, f = 450 mhz g pe @ f opt 11.5 db v ce = 3 v, i c = 1 ma, f = 945 mhz g pe @ f opt 10.5 db v ce = 2 v, i c = 1.5 ma, f = 945 mhz g pe @ f opt 12.5 db transducer gain v ce = 2 v, i c = 1.5 ma, f = 945 mhz, z o = 50 |s 21e | 2 10 db real part of input impedance v ce = 3 v, i c = 1 ma, f = 945 mhz re (h11e) 50 v ce = 2 v, i c = 1.5 ma, f = 945 mhz re (h11e) 50 16866 iso method e 0.4 (0.016) 0.5 (0.016) 0.65(0.026) 1.15(0.045) 0.1 b 0.1 a 1.5 (0.059) 1.7 (0.066) 0.6 (0.023) 0.8 (0.031) 3 x 0.20 (0.008) 3 x 0.30 (0.012) 1.5 (0.059) 1.7 (0.066) 0.75 (0.029) 0.95 (0.037) 0.10 (0.004) 0.20 (0.008) 0.5 (0.016) 1.0 (0.039)
www.vishay.com 4 document number 85104 rev. 1.4, 05-sep-08 s852tf vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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